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Bulletin I27099 rev. C 03/01
IRK.F200.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR MAGN-A-pak Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
200 A
Description
These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
IRK.F200..
200 85 444
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
7600 8000 290 265 2900 20 and 25 2 up to 1200 - 40 to 125
It
@ 50Hz @ 60Hz
I2t tq t rr VDRM / VRRM TJ range
C
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1
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 IRK.F20012
VRRM/VDRM, maximum repetitive peak reverse voltage V
800 1200
VRSM , maximum nonrepetitive peak rev. voltage V
800 1200
IRRM/I DRM max.
@ T J = 125C
mA
50
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 85 10/0.47F 380 460 310 250 180 50 80%VDRM 50 60 85 560 690 450 360 280 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
630 710 530 410 300 50
850 1060 760 560 410 50
2460 1570 630 410 50 80%VDRM
3180 2080 860 560 50
A A A A A V V
80%VDRM 60
85
60
A/s C
10/0.47F
10/0.47F
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F200..
200 85 444 7600 8000 6400 6700
Units Conditions
A C A A as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
290 265 205 187
I2 t
Maximum I2 t for fusing
2900 1.18 1.25 0.74 0.70 1.73 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F200..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 750A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time K 20
2 J 25
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 50 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F200..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F200..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case R thC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% MAP to heatsink busbar to MAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.025 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F200..
- 40 to 125 - 40 to 150 0.125
Units Conditions
C
K/W
Per junction, DC operation
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3
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
RthJC Conduction
Conduction angle
180 120 90 60 30
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
0.009 0.010 0.014 0.020 0.032 0.006 0.011 0.015 0.020 0.033
Units
K/W
Conditions
T J = 125C
Ordering Information Table
Device Code
IRK
1
T
2
F
3
200
4
-
12
5
H
6
K
7
1 2 3 4 5 6 7
- Module type - Circuit configuration - Fast SCR - Current rating: IT(AV) x 10 rounded - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: K 20s J 25s
NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..
M a xim um A llo w ab le C ase Te m pe rature ( C )
M ax im um Allo w ab le C a se Tem p erature ( C )
130 120 110 100 90
IR K.F200.. Series R thJC (D C ) = 0.12 5 K/W
130 120 110 100 90 30 80 70 60 0 50
IR K .F2 00.. Serie s R thJC (D C ) = 0.12 5 K/W
C o nd uc tio n A ng le
C o nd uctio n P erio d
30 80 70 60 0 40 80 120 160 200 240 A vera ge O n-sta te C urrent (A ) 60 90 120 180
60 90 12 0 180 100 150 200 250 DC 300 350
A verag e On -state C urren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
M a xim um Ave rag e O n-st at e P ow er Lo ss (W ) M axim um Av e ra ge On -state P ow er Lo ss (W ) 350 300 250 200 RM S Lim it 150 100 50 0 0 40 80 120 160 200 A vera ge O n -sta te C urre n t (A)
C o n d u ction A n g le
500 450 400 350 300 250 200 RM S Lim it 150 100 50 0 0 50 100 150 200 250 300 350 Avera ge O n-sta te C urre nt (A)
C o nd uctio n P erio d
180 120 90 60 30
DC 180 120 90 60 30
IRK.F20 0.. Series Per Ju nction T J = 1 25 C
IR K.F2 00.. Series Per Ju nction T J = 1 25 C
Fig. 3 - On-state Power Loss Characteristics
7000
8000
Fig. 4 - On-state Power Loss Characteristics
Pea k H alf Sine W a ve O n-sta te C ur ren t (A)
6000
At Any Ra ted Loa d C ond ition And W ith Ra ted VRR M Ap plied Follow ing Surge. In itia l T J = 125 C @ 60 Hz 0.008 3 s @ 50 Hz 0.010 0 s
Peak H alf Sine W ave O n -sta te Curren t (A)
7000
6000
M a xim um N on Rep etitiv e Surge C urrent V ersus Pulse Tra in D ura tio n. Co ntro l O f C o nduction May Not Be Maintained. In itial TJ = 125 C No V o lta ge Re a p p lie d Ra te d V RR M R e a pp lie d
5000
5000
4000 IRK.F20 0.. Series Pe r Jun ctio n 3000 1 10 100
Nu m b er O f E qu a l Am plitu d e Half C yc le C u rre nt Pu lse s (N)
4000 IRK.F200.. Series Pe r Jun ctio n 3000 0.01 0.1
Pu ls e Train D uration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantan e ous O n -state C urre nt (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Valu e: R thJC = 0.1 25 K/W (D C O pera tio n) 0.1
1000 T J= 25 C T J = 12 5 C IR K.F200 .. Series P er Jun c tio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V o lta g e (V )
Tran sient The rm al Im pedance Z thJC (K/W )
0.01
IR K.F200.. Series Per Jun ctio n 0.001 0.001 0.01 0.1 1 10 100
Square W a ve Pulse D uration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
6
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
M a xim u m Re verse Rec ove ry C ha rg e - Q rr ( C ) M axim um Re verse Re c overy C urre n t - Irr (A ) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fall O f Fo rw ard C urre nt - d i/dt (A / s) IRK .F200.. Serie s T J = 125 C
I TM = 1000 A 500 A 300 A 200 A 100 A
180
I TM = 1 000A 5 00A 3 00A 2 00A 1 00A
150
120
90
60
IRK.F200.. Se ries T J = 125 C 10 20 30 40 50 60 70 80 90 100
30 Rate O f Fa ll O f Forw ard C urren t - d i/dt (A / s)
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
Fig. 10 - Reverse Recovery Current Characteristics
Peak O n-stata C urrent (A)
50 H z 1 50 40 0 50 H z 150 40 0 1 00 0 2 50 0 5000
1E3
2 50 0 5 00 0
1 00 0
1E2
IRK.F200.. Series Sinuso id a l p ulse T C = 85 C Snub b er c ircuit R s = 10 o hm s C s = 0.47 F V D = 80% V D R M IRK .F200.. Series Sinuso id a l p ulse T C = 60 C Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
tp 1E1 1E1
tp
1E2
1E3
1E4 E1 1E4 1E1
1E2
1E3
1E4
Pulse Base w idth ( s)
Pu lse Base w id th ( s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F200.. Series Tra p ezo id a l p ulse T C= 85 C d i/d t 5 0A/ s IRK .F2 00.. Se rie s Tra p ezoid a l p ulse T C= 85 C d i/d t 100A/ s
Pea k O n -state C urren t (A )
tp
tp
50 H z 150
50 H z 150 400 1 00 0 2 50 0
1E3
1 00 0 2 50 0
5 00 0
40 0
Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
5000
1E2 1E1
Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
1E2
1E3
1E4 1E1 1E4 E1
1E2
1E3
1E4
Pulse Base w idth ( s)
Pu lse Base w idth ( s)
Fig. 12 - Frequency Characteristics
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
1E4
Pea k O n -state C urren t (A )
50 H z 150 400 40 0 1000 2 50 0 5000 150
50 H z
1E3
2 50 0 5 00 0
1 00 0
tp 1E2 1E1
IRK.F 200.. Series Tra p ezoid a l p ulse T C= 60 C d i/d t 50A/ s
Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
tp
IRK .F200.. Series Tra pezo id a l p ulse T C= 60 C di/d t 100A/ s
Snub b e r c irc uit R s = 10 ohm s C s = 0.4 7 F V D = 80% V D R M
1E2
1E3
1E4 1E1 1E4 E1
1E2
1E3
1E4
Pulse Base w idth ( s)
Pulse Base w idth ( s)
Fig. 13 - Frequency Characteristics
1E4
10 jou les per p u lse 5 10 jou les p er p ulse 5 2 .5 1 0 .5 0 .2 5 0 .1 0 .05
Pea k O n -state C urre n t (A )
2 .5 1
1E3
0 .0 5
0 .5 0 .2 5 0 .1
1E2 tp
IRK .F200.. Se ries S inusoid a l p ulse IRK .F200.. Series Tra p ezoid a l p ulse d i/d t 50A / s
tp
1E1 1E1
1E2
1E3
1E4 E1 1E4 1E1
1E2
1E3
1E4
Pulse Base w id th ( s)
Pulse Base w idth ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantane ous G ate V oltage (V) R ectan g u la r g a te pu lse a ) Reco m m en d ed lo a d lin e fo r ra ted d i/d t : 1 0V , 10 o h m s b ) R eco m m end ed lo a d lin e fo r < = 30% ra ted d i/d t : 1 0V , 20 o h m s (a ) (b )
Tj=25 C Tj=125 C T j=- 40 C
(1) (2) (3) (4)
PG M PG M PG M PG M
= = = =
8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s
10
1 VG D IG D 0.1 0.01 0.1
(1)
(2)
(3 )
(4)
IRK.F200.. Series 1
Frequenc y Lim ite d by PG (AV ) 10 100
In sta n ta n eo u s G ate C u rrent (A )
Fig. 15 - Gate Characteristics
8
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